SI2323DS-T1-GE3 MOSFET 20V 4.7A 1.25W 39 mohms @ 4.5V

Manufacturer: Vishay
Product category: MOSFET
Technology: si
Installation style: SMD/SMT
Package/box: SOT-23-3
Transistor polarity: p-channel
Number of channels: 1 Channel
Vds- drain-source breakdown voltage: 20 V.
Id- continuous drain current: 4.7 a.
Rds On- drain-source on resistance: 39 mOhms
Vgs-gate-source voltage: - 8 V,+8 V
Vgs th- gate-source threshold voltage: 1 V
Qg- gate charge: 12.5nc.
Minimum operating temperature:-55 C.
Maximum operating temperature:+150 C.
Pd- power dissipation: 1.25 W
Channel mode: Enhancement
Trade name: TrenchFET
Package: Reel
Package: cuttape
Encapsulation: MouseReel
Trademark: Vishay Semiconductors
Configuration: Single
Descending time: 48 ns
Height: 1.45 mm
Length: 2.9 mm
Product type: MOSFETs
Rise time: 43 ns
Series: SI2
Subcategory: Transistors
Transistor type: 1 P-Channel
Typical closing delay time: 71 ns
Typical turn-on delay time: 25 ns
Width: 1.6 mm
Part number alias: SI2323DS-T1-BE3 SI2323DS-GE3-ge3
Unit weight: 8 mg

SI2323DS-T1-GE3.pdf

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SI2323DS-T1-GE3 MOSFET 20V 4.7A 1.25W 39 mohms @ 4.5V Images